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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD433/435/437 DESCRIPTION With TO-126 package Complement to type BD434/436/438 APPLICATIONS For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER CONDITIONS BD433 BD435 VCBO Collector-base voltage VCEO CHA IN Emitter -base voltage Collector current (DC) Collector-emitter voltage GE S N BD437 BD433 BD435 BD437 Open emitter EMIC OND TOR UC VALUE 22 32 45 22 32 45 UNIT V Open base V VEBO IC ICM IB PC Tj Tstg Open collector 5 4 7 1 V A A A W ae ae Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 36 150 -65~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage BD433/435 IC=2A; IB=0.2A BD437 BD433/435 VBE Base-emitter on voltage BD437 BD433 VCEO(SUS) Collector-emitter sustaining voltage BD435 BD437 BD433 ICES Collector cut-off current BD435 BD437 VCB=22V; IE=0 VCB=32V; IE=0 VCB=45V; IE=0 VCE=22V; VBE=0 VCE=32V; VBE=0 VCE=45V; VBE=0 VEB=5V; IC=0 IC=0.1A; IB=0 IC=2A ; VCE=1V CONDITIONS SYMBOL BD433/435/437 MIN TYP. MAX 0.5 UNIT VCEsat 0.2 0.6 1.1 V V 1.2 22 32 45 V 100 |I A ICES Collector cut-off current BD433 BD435 BD437 IEBO Emitter cut-off current hFE-1 DC current gain hFE-2 DC current gain HAN INC BD433/435 BD437 GE S IC=10mA ; VCE=5V EMIC DUC ON 40 30 85 50 TOR 100 |I 1 130 A mA IC=0.5A ; VCE=1V 140 BD433/435 hFE-3 DC current gain BD437 fT Transition frequency IC=250mA; VCE=1V IC=2A ; VCE=1V 40 3 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD433/435/437 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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